The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2004
Filed:
Feb. 12, 2001
Fabrice Geiger, Meylan, FR;
Frederic Gaillard, Voiron, FR;
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A method for depositing a trench oxide filling layer ( ) on a trenched substrate ( ) utilizes the surface sensitivity of dielectric materials such as O /TEOS. Such materials have different desposition rates on differently constituted surfaces at different levels on the trenched substrate ( ) so that the surface profile of the deposited layer ( ) is substantially self-planarized. Depositing the dielectric material on a silicon trench ( ) produces a high quality filling layer, and cleaning the trench ( ) prior to desposition can increase the quality. After desposition, an oxidizing anneal can be performed to grow a thermal oxide ( ) at the trench surfaces and densify the dielectric material. A chemical mechanical polish can be used to remove the excess oxide material above an etch stop layer ( ) of the substrate ( ) which can be formed of LPCVD nitride or CVD anti-reflective coating.