The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Jul. 27, 2001
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A novel etching method for preventing spiking and undercutting of an ultra low-k material layer in damascene metallization is described. A region to be contacted is provided in or on a semiconductor substrate. A liner layer is deposited overlying the region to be contacted. An ultra low-k dielectric layer is deposited overlying the liner layer. A damascene opening is etched through the ultra low-k dielectric layer to the liner layer overlying the region to be contacted wherein this etching comprises a high F/C ratio etch chemistry, high power, and low pressure. The liner layer within the damascene opening is etched away to expose the region to be contacted wherein this etching comprises a high F/C ratio etch chemistry, low power, and low pressure to complete formation of a damascene opening in the fabrication of an integrated circuit device.