The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2004
Filed:
Feb. 21, 2002
Applicant:
Inventors:
Anand Murthy, Portland, OR (US);
Ravindra Soman, Hillsboro, OR (US);
Boyan Boyanov, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1365 ;
U.S. Cl.
CPC ...
H01L 2/1365 ;
Abstract
A composite of germanium film for a semiconductor device and methods of making the same. The method comprises growing a graded germanium film on a semiconductor substrate in a deposition chamber while simultaneously decreasing a deposition temperature and decreasing a silicon source gas and increasing a germanium source gas over a predetermined amount of time. The graded germanium film comprises an ultra-thin silicon-germanium buffer layer and a germanium film.