The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2004
Filed:
Jul. 31, 2000
Applicant:
Inventor:
Mitsuaki Kabasawa, Saijo, JP;
Assignee:
Sumitomo Eaton Nova Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 3/708 ; A61N 5/00 ; G21C 5/00 ;
U.S. Cl.
CPC ...
H01J 3/708 ; A61N 5/00 ; G21C 5/00 ;
Abstract
In an ion implantation apparatus, a reduction of an energy contanimination is achieved when ions are implanted into a wafer with a low energy. A beam transportation efficiency between mutually different positions on a beam line correlates with the energy contamination of the wafer, and the beam transportation efficiency is adjusted so that the energy contamination becomes small. Since the beam transportation efficiency is obtained by measuring a beam electric current at each position, the beam transportation efficiency can be obtained before the ions are implanted into the wafer.