Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma out put or adjusting the same upwards

Abstract

A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate ( ), in particular, a patterned silicon body, with the assistance of a plasma ( ), is proposed. In the process, the plasma ( ) is produced by a plasma source ( ) to which a high-frequency generator ( ) is connected for applying a high-frequency power. Moreover, this high-frequency generator is in communication with a first means which periodically changes the high-frequency power applied to the plasma source ( ). Besides, provision is preferably made for a second means which adapts the output impedance of the high-frequency generator ( ) to the prevailing impedance of the plasma source ( ) which changes as a function of the high-frequency power. The proposed anisotropic etching method is carried out in separate and alternating etching and polymerization steps, a higher high-frequency power of up to 5000 watts being, at least temporarily, applied to the plasma source ( ) during the etching steps than during the deposition steps. The proposed device is also suitable for igniting a plasma ( ) and for adjusting upward or pulsing a plasma power from a starting value to up to 5000 watts.