The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2004

Filed:

Dec. 26, 2000
Applicant:
Inventors:

Kashmir S. Sahota, Fremont, CA (US);

Diana M. Schonauer, San Jose, CA (US);

Johannes F. Groschopf, Wainsdorf, DE;

Gerd F. C. Marxsen, Radebeul, DE;

Steven C. Avanzino, Cupertino, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; C09K 1/300 ; C09K 1/306 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; C09K 1/300 ; C09K 1/306 ;
Abstract

A Ta barrier slurry for Chemical-Mechanical Polishing (CMP) during copper metallization contains an organic additive which suppresses formation of precipitates and copper staining. The organic additive is chosen from a class of compounds which form multiple strong adsorbant bonds to the surface of silica or copper, which provide a high degree of surface coverage onto the reactive species, thereby occupying potential reaction sites, and which are sized to sterically hinder the collisions between two reactant molecules which result in new bond formation. The organic additive-containing slurry cain be utilized throughout the entire polish time. Alternatively, a slurry not containing the organic additive can be utilized for a first portion of the polish, and a slurry containing the organic additive or a polishing solution containing the organic additive can be utilized for a second portion of the polish.


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