The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2004
Filed:
Dec. 15, 2000
Genitech, Inc., Taejon, KR;
Abstract
A method of forming copper conductors for interconnecting active and passive elements as well as signal and power lines for circuits and devices on silicon wafers is disclosed. The method disclosed herein involves with using catalysts in conjunction with a chemical vapor deposition(CVD) process with typically using copper as a source material for forming interconnecting conductors. Interconnecting method for filling trenches, via holes, contacts, large trenches and holes for power devices and lines as well as for forming large passive elements is also disclosed. Disclosed herein are also a method of filling narrow and deep trenches and small in diameter and deep holes, and a method of forming very thin film on the flat top surface so that an etchback process, such as wet or dry etchback as well as plasma etchback processes, can be used for removing a thin film in preparation for subsequent processing steps, thereby rather expensive chemical mechanical polishing(CMP) process need not be used.