The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2004

Filed:

Aug. 03, 1999
Applicant:
Inventors:

Tadahiro Ohmi, Sendai-shi, Miyagi-ken 980-0813, JP;

Takahisa Nitta, Tokyo, JP;

Masaki Hirayama, Miyago-ken, JP;

Ryu Kaiwara, Miyago-ken, JP;

Kazuhide Ino, Miyago-ken, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/00 ; C23C 1/600 ;
U.S. Cl.
CPC ...
H05H 1/00 ; C23C 1/600 ;
Abstract

The plasma process apparatus is capable of uniformalizing the density of a plasma generated thereby and a self-bias voltage associated therewith. This apparatus include two parallel plates electrodes I and II, one of electrodes I and II being configured for carrying a substrate to be plasma processed. The apparatus further includes a magnetic field applying means for applying a magnetic field horizontal and one-directional to a surface of the substrate. An additional element of the apparatus is a single auxiliary electrode positioned around the periphery of electrode I and having high-frequency power applied thereto. The alignment of the electrodes is such that they define a space where a plasma for use in processing the substrate is to be excited.


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