The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Dec. 31, 2002
Jun Ohtani, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A memory cell in a MRAM includes four N channel MOS transistors responsive to a write permit signal attaining an H level to connect program lines of first and second tunneling magneto-resistance elements between first and second storage nodes and a line of ground potential to write signals in the first and second storage nodes to the first and second tunneling magneto-resistance elements. The writing of signals to first and second tunneling magneto-resistance elements can be performed more rapidly than the conventional case where signals in the first and second storage nodes are read out, and then written into the tunneling magneto-resistance elements via a write circuit and a write bit line pair.