The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Apr. 30, 2003
Applicant:
Inventors:
Ian R. Post, Portland, OR (US);
Kaizad Mistry, Lake Oswego, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 2/18238 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 2/18238 ; H01L 2/1336 ;
Abstract
An apparatus including a MOSFET circuit having dual threshold voltage NMOS and PMOS transistors wherein the threshold voltage of a low threshold NMOS transistor is set with a first halo implant, a threshold voltage of a high threshold voltage PMOS transistor is set with a second halo implant, and, a threshold voltage of a high threshold voltage NMOS transistor is enhanced while, a threshold voltage of a low threshold voltage PMOS transistor is compensated with a third halo implant.