Group iii nitride compound semiconductor element and method for producing the same

Abstract

An object of the invention is to produce, at high efficiency, semiconductor elements which are formed of a high-quality crystalline semiconductor having no cracks and a low dislocation density and which have excellent characteristics. Specifically, a mask formed from SiO film is provided on the Si(111) plane of an n-type silicon substrate, and a window portion (crystal growth region) in the shape of an equilateral triangle having a side of approximately 300 &mgr;m is formed through the mask. The three sides of the equilateral triangle are composed of three edges; each edge defined by the (111) plane and another crystal plane that is cleavable. Subsequently, a multi-layer structure of semiconductor crystals in an LED is formed through crystal growth of a Group III nitride compound semiconductor. Thus, limiting the area of one crystal growth region to a considerably small area weakens a stress applied to a semiconductor layer, thereby readily producing semiconductor elements having excellent crystallinity. In addition, semiconductor elements can be arranged in a semiconductor wafer at high packing density without loss, and each side of these semiconductor elements can be readily arranged in a line on a semiconductor wafer, thereby enhancing quality, yield, productivity, etc. of semiconductor elements.