The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Sep. 04, 2002
Applicant:
Inventors:
Chin-Hsiang Lin, Hsinchu, TW;
Lee-Jen Chen, Hsinchu, TW;
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method of forming an isolation trench for an integrated circuit on a semiconductor substrate includes providing a semiconductor substrate having a-pad oxide layer, a nitride layer, and a patterned photoresist layer, and removing portions of the nitride layer, pad oxide layer, and semiconductor substrate to form a trench. After the trench is formed, the patterned photoresist is removed and a first fill layer is formed inside of the trench. The first fill layer is then etched back using a wet spin etch, and a second fill layer is subsequently formed over the first fill layer.