The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2004
Filed:
Aug. 09, 2002
Applicant:
Inventors:
Mahalingam Nandakumar, Plano, TX (US);
Youngmin Kim, Allen, TX (US);
Amitava Chatterjee, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
An implant at HVGX pattern (step ) is provided to allow selective transistor threshold voltage Vth adjustment on the core transistors without affecting the I/O transistor threshold voltage Vt. The implant provides independently tuned either NMOS core transistors and I/O transistor Vth or PMOS core transistors and I/O transistor Vth.
Nandakumar, Mahalingam. (2004). Fabricating dual voltage cmosfets using additional implant into core at high voltage mask (U.S. Patent No. 6713334). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6713334
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile