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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6710401 B1

PDFFull Text
Date of Patent:
Mar. 23, 2004

Filed:

May. 11, 2000

Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round

Applicant:
Inventors:

Katsumi Nakamura, Sanda, JP;

Tadaharu Minato, Kobe, JP;

Shuuichi Tominaga, Karatsu, JP;

Katsuomi Shiozawa, Kobe, JP;

Assignee:

Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;

Attorney:
Primary Examiner:

Eddie Lee

Assistant Examiner:

Eugene Lee

Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

A semiconductor device which includes a substrate made of a semiconductor having a main surface. A trench is selectively formed in the substrate at a predetermined depth from the main surface. An insulating film is formed at an inner wall of the trench. A control electrode layer fills an inside of the trench through the insulating film. An insulating layer protrudes from the main surface on the control electrode layer. At least one of an edge of an opening of the trench and a bottom of the trench has a rounded surface.

Find Patent Forward Citations

Nakamura, Katsumi. (2004). Semiconductor device including a trench with at least one of an edge of an opening and a bottom surface being round (U.S. Patent No. 6710401). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6710401

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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