The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Aug. 26, 2002
Applicant:
Inventors:
Paul Vande Voorde, San Mateo, CA (US);
Chun-Mai Liu, San Jose, CA (US);
Assignee:
Winbond Electronics Corporation, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/702 ;
U.S. Cl.
CPC ...
H01L 2/702 ;
Abstract
Ion implanted resistors formed in the body of a crystalline silicon substrate. The resistors have a different conductivity type from that of the silicon substrate. The sheet resistance and temperature dependence of the resistor layer is determined by the dose of the implant. Temperature variation can be optimized to be less than 2% over the temperature range −40 C to +85 C. Furthermore, the temperature variation at room temperature (˜25 C) can be reduced to nearly zero.