The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Jun. 16, 1998
Intel Corporation, Santa Clara, CA (US);
Abstract
A method of fabricating a field effect transistor with increased resistance to hot carrier damage is disclosed. An oxide is grown on the gate electrode. This oxide is strengthened by nitridation and anneal. After a lightly doped drain implant, a second side oxide and a conformal nitride layer are deposited. Then, the conformal nitride is anisotropically etched to form spacers for masking a high dose drain implant. An NMOS transitor fabricated with this process has been found to be forty percent less susceptible to hot carrier damage than a conventional lightly doped drain process. Also, this process has proven to be more manufacturable than one in which the side oxide is nitrided and re-oxidized.