The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
Nov. 17, 2000
Akira Goda, Yokohama, JP;
Kazuhiro Shimizu, Yokohama, JP;
Riichiro Shirota, Fujisawa, JP;
Norihisa Arai, Omiya, JP;
Naoki Koido, Yokohama, JP;
Seiichi Aritome, Yokohama, JP;
Tohru Maruyama, Yokohama, JP;
Hiroaki Hazama, Hachioji, JP;
Hirohisa Iizuka, Centreville, VA (US);
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device exhibits a stable driving force and high performance reliability. The semiconductor device has at least one transistor having a gate insulating film formed on a element region in a semiconductor substrate, a gate electrode formed on the gate insulating film, and a diffused layer in element regions on both sides of the gate electrode. The device also has a barrier insulating film formed so as to cover the transistor and the diffused layer. The height from a surface of the semiconductor substrate to the barrier insulating film is greater than the height from the surface, of the interface between the gate insulating film and the gate electrode.