The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2004
Filed:
Apr. 17, 2003
Chung-Yeh Lee, Hsinchu, TW;
Macronix International Co. Ltd., Hsinchu, TW;
Abstract
A method for forming a metal salicide layer on a shallow junction is described. A substrate having a gate structure thereon and a shallow junction therein is provided. An atomic layer deposition (ALD) process is then performed to deposit a tungsten salicide layer on the shallow junction. In the ALD process, a gaseous silicon-containing compound and a gaseous metal-containing compound that react into metal silicide are introduced alternatively onto the substrate, wherein either compound can be introduced at first. When either compound is introduced at first, the flow rate thereof is controlled so that only a single layer of molecules are adsorbed, while the flow rate of the metal-containing compound is controlled in each case so that few silicon atoms in the substrate are consumed. By repeating the two gas introduction steps, a metal salicide layer constituted of many thin layers is formed on the shallow junction.