The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Oct. 22, 2001
Applicant:
Inventors:
Yongzhong Hu, San Jose, CA (US);
Jein-Chen Young, Milpitas, CA (US);
Assignee:
Lattice Semiconductor Corp., Hillsboro, OR (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract
An EEPROM cell includes a sense transistor and a select transistor, each having a first active region ( ) formed in a substrate, and sharing a second active region ( ). The EEPROM cell may also include a floating gate ( ) having a first portion (FG ) forming a gate region for said sense transistor, and a second portion (FG ) overlying the second active region and forming a program junction with said second active region. The first portion of said floating gate has a concentration of an impurity greater than a concentration of said impurity in the second portion of the floating gate.