The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Oct. 23, 2001
Applicant:
Inventors:
Youichi Ohsawa, Niigata-ken, JP;
Jun Watanabe, Niigata-ken, JP;
Takeshi Nagata, Niigata-ken, JP;
Jun Hatakeyama, Niigata-ken, JP;
Assignee:
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C 1/73 ; G03F 7/039 ; G03F 7/20 ; G03F 7/30 ; C07C / ;
U.S. Cl.
CPC ...
G03C 1/73 ; G03F 7/039 ; G03F 7/20 ; G03F 7/30 ; C07C / ;
Abstract
Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.