The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Sep. 30, 2002
Kelly T. Hurley, Boise, ID (US);
Graham Wolstenholme, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
FLASH memory circuitry includes an array area and peripheral circuitry area. Multiple series of spaced isolation trenches are provided. At least one of the series of spaced trench isolation regions is formed in a semiconductor substrate within the FLASH peripheral circuitry area. At least some of the FLASH peripheral circuitry area spaced trench isolation regions have maximum depths which are greater than first and second maximum depths of trench isolation regions formed within array area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile