The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2004
Filed:
Feb. 07, 2001
Hussein Ibrahim Hanafi, Basking Ridge, NJ (US);
Erin C. Jones, Tuckahoe, NY (US);
Cheruvu Suryanarayana Murthy, Hopewell Junction, NY (US);
Philip Joseph Oldiges, LaGrangeville, NY (US);
Leathen Shi, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a method for fabricating sub-0.05 &mgr;m double-gated MOSFET devices utilizing a damascene-gate process. The damascene-gate process provides sub-0.05 &mgr;m double-gated MOSFET devices which include a frontside poly gate electrode and a backside implant region. The two gates are separated by two gate dielectrics that include a thin (on the order of about 200 Å or less) Si layer which is sandwiched between the gate dielectrics. The Si layer serves as the channel region of the device. Short-channel effects are greatly suppressed in the present double-gate MOSFET device because the two gates terminate the drain filed lines, preventing the drain potential from being felt at the source end of the channel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile