The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Jun. 21, 2002
Applicant:
Inventors:
Nobuo Konishi, Nirasaki, JP;
Mitsuaki Iwashita, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ; H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ; H01L 2/131 ; H01L 2/1469 ;
Abstract
After coating a resist for silylation on the semi-conductor substrate, the resist is exposed with a pattern. Then the silylation process is performed to form a silylated layer and the silylated layer is hardened with performing an electron beam processing or a ultra-violet ray processing. After that, an etching is performed with using the hardened silylated layer as a mask and the wiring step is taken without removing the hardened silylated layer as a stopper for chemical mechanical polishing. With this embodiment, the patterning steps of an insulation film can be simplified.