The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Oct. 30, 2002
Hideaki Kikuchi, Kawasaki, JP;
Genichi Komuro, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
There is provided a semiconductor device manufacturing method having a ferroelectric or high-dielectric capacitor, which comprises the steps of forming an underlying insulating film over a semiconductor substrate, forming a first conductive film on the underlying insulating film, forming a dielectric film consisting of ferroelectric material and high-dielectric material on the first conductive film, forming a second conductive film on the dielectric film, etching selectively the second conductive film in a first atmosphere containing a bromine to form a capacitor upper electrode, etching selectively the dielectric film in a second atmosphere containing a chlorine to form a capacitor dielectric film, and etching selectively the first conductive film in a third atmosphere containing the bromine to form a capacitor lower electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile