The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Oct. 17, 2001
Applicant:
Inventors:
Artur Balasinski, Cupertino, CA (US);
Linard Karklin, Sunnyvale, CA (US);
Valery Axelrad, Woodside, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/750 ;
U.S. Cl.
CPC ...
G06F 1/750 ;
Abstract
A method for determining device yield of a semiconductor device design, comprises determining statistics of at least one device parameter from at least two device layer patterns; and calculating device yield from the statistics. At least one of the device layer patterns is neither a diffusion layer pattern nor a gate poly layer pattern.