The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2004

Filed:

May. 05, 2001
Applicant:
Inventors:

R. Dean Adams, St. George, VT (US);

Aneesha P. Deo, Endicott, NY (US);

Kamran Zarrineh, Vestal, NY (US);

Assignee:

Cadence Design Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 2/900 ; G11C 7/00 ; G11C 1/606 ;
U.S. Cl.
CPC ...
G11C 2/900 ; G11C 7/00 ; G11C 1/606 ;
Abstract

A method for testing memory cells for data retention faults is disclosed. A first logical value is stored in a first cell, and a second logical value is stored in a second cell of a memory device. The second cell shares the same column with the first cell. The bitlines associated with the first and second cells are prevented from being precharged before the second cell can be read. After the second cell has been read repeatedly, the first cell is read, and the bitlines associated with the first and second cells are precharged. At this point, a data retention fault is determined to have occurred if the first cell does not contain the first logical value.


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