The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2004
Filed:
Nov. 30, 2001
Applicant:
Inventors:
Huong Thanh Nguyen, San Ramon, CA (US);
Mark Naoshi Kawaguchi, Palo Alto, CA (US);
Mehul B. Naik, San Jose, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Ellie Yieh, San Jose, CA (US);
Assignee:
Applied Materials Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/42 ;
U.S. Cl.
CPC ...
G03F 7/42 ;
Abstract
A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
Nguyen, Huong. (2004). Solvent free photoresist strip and residue removal processing for post etching of low-k films (U.S. Patent No. 6680164). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6680164
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile