The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2004
Filed:
May. 20, 2003
Dan Katz, Agoura Hills, CA (US);
Douglas A. Buchberger, Jr., Livermore, CA (US);
Yan Ye, Saratoga, CA (US);
Robert B. Hagen, Newark, CA (US);
Xiaoye Zhao, Mountain View, CA (US);
Ananda H. Kumar, Fremont, CA (US);
Kang-Lie Chiang, San Jose, CA (US);
Hamid Noorbakhsh, Fremont, CA (US);
Shiang-Bau Wang, Hsinchu, TW;
Applied Materials Inc., Santa Clara, CA (US);
Abstract
The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.