The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2004

Filed:

Nov. 17, 2000
Applicant:
Inventors:

Cheng-Yuan Tsai, Yun-Lin, TW;

Chin-Hsiang Lin, Nan-Tao, TW;

Ming-Sheng Yang, Hsin-Chu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

A first dielectric layer is formed on a substrate, wherein the first dielectric layer is a low-K material of an organic polymer. An adhesion promoter is then deposited on the first dielectric layer by chemical vapor deposition to form a first interlayer, wherein the first adhesion promoter is an organic material that comprises a C—H group and a siloxane (Si—O), such as methyltriacetoxysilane (MTAS). Next, an inorganic layer is formed on the first interlayer. Then the adhesion promoter mentioned previously is deposited on the inorganic layer by chemical vapor deposition to form a second interlayer. Next, a second dielectric layer is formed on the second interlayer , wherein the second interlayer is a low-K material of an organic polymer. Finally, a baking process is performed.


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