The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Dec. 07, 2001
Shinichi Fukada, Hino, JP;
Naotaka Hashimoto, Koganei, JP;
Masanori Kojima, Fussa, JP;
Hiroshi Momiji, London, GB;
Hiromi Abe, Tokyo, JP;
Masayuki Suzuki, Kokubunji, JP;
Renesas Technology Corporation, Tokyo, JP;
Abstract
An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p/n junction with a well region ( ), and one implantation of a dopant ion that does not influence a position of the p/n junction between the source and drain regions (S and D) and the well region with a shallow implantation depth and a large implantation amount. After conducting an activation heat treatment of the dopant, a surface of the source/drain region is made into cobalt silicide , so that the source/drain region (S and D) can have a low resistance, and a p/n junction leakage can be reduced.