The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Aug. 12, 2002
Applicant:
Inventor:
Yoshikazu Tsunemine, Tokyo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A conductive layer ( ) including polycrystalline silicon is provided on a second interlayer insulating film ( ). An opening (OP ) is defined in the conductive layer ( ). Thereafter utilizing electroplating, a conductive material ( ) serving as a capacitor lower electrode is formed in the opening (OP ). The conductive layer ( ) holds an insulating layer ( ) provided thereon, thus avoiding the conductive material ( ) from being deposited over the conductive layer ( ). Therefore, the conductive material can be formed with reliability in the opening. Further, it is possible to omit the steps of forming a redundant film and removing the same.