The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Mar. 20, 2002
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
A method of coating a low dielectric constant material layer wherein the wafer surface is pre-wetted using a solvent to prevent or reduce coating defects is described. A semiconductor substrate is provided wherein a top surface of the semiconductor substrate may have surface defects. A solvent is coated overlying the top surface of the semiconductor substrate. A low dielectric constant material layer is coated overlying the solvent wherein the solvent covers the surface defects thereby preventing defects in the low dielectric constant material layer.