The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Sep. 13, 2002
Rajneesh Jaiswal, Tucson, AZ (US);
Chandrakant Patadia, Tucson, AZ (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for processing a partially fabricated semiconductor wafer having a layer of nichrome resistor material patterned to form a plurality of nichrome resistors on a surface of the wafer includes performing a wet pre-metallization cleaning step on the wafer surface, performing an RF argon plasma sputter etching process on the wafer surface, advancing the wafer into a second reactor without breaking a vacuum in either reactor, depositing a layer of metal on the surface, patterning the metal to form a predetermined metal interconnection pattern thereof, performing a stabilization bake cycles on the wafer, measuring the TCR of the nichrome resistor material, and rejecting the wafer if the measured TCR is greater than a predetermined value.