The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Feb. 06, 2001
Lu You, San Jose, CA (US);
Christy Woo, Cupertino, CA (US);
Pin Chin Connie Wang, Menlo Park, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor device includes a first metallization level, a first diffusion barrier layer, a first etch stop layer, a dielectric layer and an opening extending through the dielectric layer, the first etch stop layer, and the first diffusion barrier layer. The first diffusion barrier layer is disposed over the first metallization level. The first etch stop layer is disposed over the first diffusion barrier layer, and the dielectric layer is disposed over the first etch stop layer. The opening can also have rounded corners. A sidewall diffusion barrier layer can be disposed on sidewalls of the opening, and the sidewall diffusion barrier layer is formed from the same material as the first diffusion barrier layer. The first etch stop layer can be formed from a material different than the first barrier layer, and the material of the first barrier layer can be selected from the group consisting of tantalum, titanium, tantalum nitride, titanium nitride, and tungsten nitride. Metal within the opening form a second metal feature, and the metal can comprise copper or a copper alloy. A method of manufacturing the semiconductor device is also disclosed.