The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2003

Filed:

Jul. 12, 2002
Applicant:
Inventors:

Mikhail Rodionovich Baklanov, Leuven, BE;

Konstantin Petrovich Mogilnikov, Novosibirsk, RU;

Karen Maex, Herent, BE;

Denis Shamiryan, Leuven, BE;

Fedor Nikolaevich Dultsev, Novosibirsk, RU;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/166 ; G01N 1/508 ; G01N 2/121 ; G01L 0/124 ; G01M 0/900 ;
U.S. Cl.
CPC ...
H01L 2/166 ; G01N 1/508 ; G01N 2/121 ; G01L 0/124 ; G01M 0/900 ;
Abstract

A method and apparatus for evaluation of films, such as low-k thin films with nano-scale pores, are provided. The evaluation may include characterization of the pore structure, the characterization results in determining pore sizes, hence obtaining pore size data. Moreover, the characterization may result in a non-destructive evaluation of mechanical properties, in particular the Young's Modulus, or the effect of interfering physical & chemical factors such as Pore Killers. Further, in line monitoring or studying of pore structure porosity and pore size distribution (PSD) of low-k films and evaluation of the mechanical properties of porous low-k films simultaneously using the same set of experimental data is provided.


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