The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Mar. 17, 2003
Jane-Bai Lai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method and a solution for preparing SEM samples comprising low-K dielectric materials. The process begins by providing a SEM sample comprising low-K dielectric material and silicon oxide material. A solution is formed for preparing (staining and etching) the SEM sample by adding NH F (s) to a solution comprising CH COOH having a concentration of about 98% at a ratio of about 1 g NH F (s):20 ml CH COOH, then stirring until the NH F (s) is thoroughly dissolved. Alternatively, the NH F (s) can be added to a solution comprising HNO having a concentration of about 70% and CH COOH having a concentration of about 98%, with a volume ratio of about 15 ml HNO :20 ml CH COOH. The NH F (s) is added at a ratio of about 1 g NH F (s):35 ml CH COOH and HNO , and stirred until the NH F (s) is thoroughly dissolved. The SEM sample is then etched in this solution for about 3 seconds, whereby the low-K dielectric material and silicon oxide material have similar etch rates with good selectivity to metals.