The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Dec. 17, 1999
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An embodiment of the instant invention is a method of fabricating an electronic device over a semiconductor substrate having an interconnecting structure comprised of aluminum, the method comprising the steps of: forming a conductive structure (layers and of FIGS. ) comprised of a metal; forming a dielectric layer (layer of FIGS. ) over the conductive structure, the dielectric layer having an upper surface; forming an opening in the dielectric layer so as to expose a portion of the conductive structure, the opening having sidewalls; selectively depositing an aluminum-containing conductive material (material and of FIG. ) in the opening; and performing an etchback process so as to remove any of the aluminum-containing conductive material formed on the hardmask and so as to etchback any portion of the aluminum-containing conductor which is situated over the upper surface of the dielectric layer. In an alternative embodiment, the method further comprises the step of: forming a hardmask on the upper surface of the dielectric layer, the hardmask having an upper surface and is formed prior to the step of forming an opening in the dielectric layer; and wherein an opening is formed in the hardmask prior to the step of forming an opening in the dielectric layer.