The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Jan. 23, 2002
Jeffrey A. Babcock, Neufahrn, DE;
Gregory E. Howard, Dallas, TX (US);
Angelo Pinto, Munich, DE;
Phillipp Steinmann, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A transit time device ( ) in a silicon-on-insulator (SOI) technology is disclosed. An anode region ( ) and a cathode region ( ) are formed on opposing ends of an epitaxial layer ( ), with an intrinsic or lightly-doped region ( ) disposed therebetween. Sinker structures ( ) are formed in an overlying epitaxial layer ( ) over and in contact with the anode and cathode regions ( ). A charge injection terminal may be formed in a sinker structure ( ) in the overlying epitaxial layer ( ), if the transit time device ( ′) is of the three-terminal type. The device ( ) has extremely low parasitic capacitance to substrate, because of the buried oxide layer ( ) underlying the intrinsic region ( ).