The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Apr. 29, 2002
Applicant:
Inventors:
Nagarajan Rajagopalan, Santa Clara, CA (US);
Joe Feng, Cupertino, CA (US);
Christopher S Ngai, Burlingame, CA (US);
Meiyee (Maggie Le) Shek, Mountain View, CA (US);
Suketu A Parikh, San Jose, CA (US);
Linh H Thanh, Cupertino, CA (US);
Assignee:
Applied Materials Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method for forming a microelectronics device is disclosed. In one embodiment, the method includes depositing a conductive structure on a substrate. A first layer comprising silicon and nitrogen is formed on the substrate. A second layer comprising silicon and nitrogen is then formed on the first layer. The nitrogen to silicon ratio in the first layer is greater than the nitrogen to silicon ratio in the second layer.