The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Oct. 15, 2001
Taiwan Semiconductor Manufacturing Co. Ltd, Hsin Chu, TW;
Abstract
A method for forming a metal-interlayer-metal (MIM) device in an embedded memory device, including semiconductor devices thereof. An MIM device can be formed upon a semiconductor substrate utilizing no more than one additional photo mask layer prior to the implementation of a back-end-of-line (BEOL) semiconductor fabrication operation, such that the MIM device can be configured as a low temperature MIM device that is fully compatible with logical semiconductor devices, thereby reducing associated manufacturing costs. The MIM device may be configured as an MIM capacitor for logic-based embedded DRAM devices, resulting in a high capacitance performed via an effective area extension of DRAM cell capacitors. Additonally, a low-temperature MIM capacitor thereof may be readily integrated for both Cu (Copper) and AlCu (Aluminum Copper) BEOL fabrication processes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile