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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6653674 B1

PDFFull Text
Expired
Date of Patent:
Nov. 25, 2003

Filed:

Aug. 23, 2002

Vertical source/drain contact semiconductor

Applicant:
Inventors:

Shyue Fong Quek, Petaling Jaya, MY;

Ting Cheong Ang, Singapore, SG;

Sang Yee Loong, Singapore, SG;

Puay Ing Ong, Johor, MY;

Assignee:

Chartered Semiconductor Manufacturing LTD, Singapore, SG;

Attorney:

Mikio Ishimaru

Primary Examiner:

John F Niebling

Assistant Examiner:

Christopher Lattin

Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

A semiconductor device is provided having angled dopant implantation and vertical trenches in the silicon on insulator substrate adjacent to the sides of a semiconductor gate. A second dopant implantation is in the exposed the source/drain junctions. Contacts having inwardly curved cross-sectional widths in the semiconductor substrate connect vertically to the exposed source/drain junctions either directly or through salicided contact areas.

Find Patent Forward Citations

Quek, Shyue. (2003). Vertical source/drain contact semiconductor (U.S. Patent No. 6653674). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6653674

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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