The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Feb. 11, 2002
Applicant:
Inventors:
Akira Unno, Kanagawa-ken, JP;
Takao Yonehara, Kanagawa-ken, JP;
Tetsuro Fukui, Kanagawa-ken, JP;
Takanori Matsuda, Kanagawa-ken, JP;
Kiyotaka Wasa, Nara-ken, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/1302 ;
Abstract
A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.