The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2003

Filed:

Dec. 19, 2001
Applicant:
Inventors:

Shiang-Bau Wang, Hsinchu, TW;

Daniel J. Hoffman, Saratoga, CA (US);

Chunshi Cui, San Jose, CA (US);

Yan Ye, Saratoga, CA (US);

Gerardo Delgadino, Santa Clara, CA (US);

David McParland, Austin, TX (US);

Matthew L. Miller, Newark, CA (US);

Douglas A. Buchberger, Jr., Livermore, CA (US);

Steven C. Shannon, San Mateo, CA (US);

Assignee:

Applied Materials, Inc, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/600 ; C23F 1/00 ;
U.S. Cl.
CPC ...
C23C 1/600 ; C23F 1/00 ;
Abstract

An inductive antenna of a plasma reactor for processing a semiconductor wafer is connected to a radio frequency (RF) power source, and consists of a conductor arranged in successive loops that wind in opposing directions, adjacent pairs of the successive loops having facing portions in which current flow is parallel, the facing portions being sufficiently close to at least nearly share a common current path, whereby to form transitions across the facing portions between opposing magnetic polarizations.


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