The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2003

Filed:

Apr. 12, 2001
Applicant:
Inventors:

Yoshio Iwamoto, Utsunomiya, JP;

James C. Lenk, O'Fallon, MO (US);

Philip Schmidt, Harvester, MO (US);

Craig Spohr, Kirkwood, MO (US);

Leslie G. Stanton, O'Fallon, MO (US);

Assignee:

MEMC Electronic Materials, Inc., St. Peters, MO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 3/68 ; F26B 3/00 ;
U.S. Cl.
CPC ...
H05B 3/68 ; F26B 3/00 ;
Abstract

A method for calibrating a semiconductor wafer drying apparatus including a heater and a vessel containing a solvent and capable of receiving semiconductor wafers comprises selecting a test heater temperature and a test processing time. A first set of wafers is placed in the vessel and the heater is operated at the test heater temperature so that a solvent vapor cloud is created in the vessel. The first set of wafers is monitored for substantial envelopment by the vapor cloud during the test processing time. Based on the monitoring step, at least one of the test heater temperature and the test processing time is adjusted to establish at least one operating parameter of an operating heater temperature parameter and an operating processing time parameter for processing successive sets of wafers so as to promote substantial vapor cloud envelopment of each set of wafers dried in the drying apparatus.


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