The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Jun. 24, 2002
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The present invention generally relates to a method of determining a source/drain junction overlap and a channel length of a small device, such as a MOS transistor. A large reference device having a known channel length is provided, and a source, drain, and substrate on which the device has been formed are grounded. A predetermined gate voltage is applied to a gate of the large device, and a gate to channel current of the reference device is measured. A source, drain, and substrate on which the small device has been formed are grounded, and the predetermined voltage is applied to a gate of the small device, and a gate to channel current of the small device is measured. The substrate and one of the source or the drain of the small device is floated, and a predetermined drain voltage is applied to source or the drain which is not floating. A gate to drain current for the small device is measured, and a source/drain junction overlap length is calculated. The source/drain junction overlap length is then used to calculate the channel length of the small device.