The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Apr. 16, 2002
Laurens Franz Taemsz Kwakman, St. Ismier, FR;
Kars Zege Troost, Eindhoven, NL;
FEI Company, Hillsboro, OR (US);
Abstract
Samples such as semiconductor wafers may be subjected to an elementary analysis by irradiation by means of electrons and measurement of the X-rays generated in the sample. In order to achieve a high spatial resolution, two adjacent holes are formed in the sample surface, leaving a very thin separating wall between said holes and hence limiting the dimension of the interaction volume However, electrons pass through the wall, thus generating disturbing X-rays in the walls of the hole behind the wall. According to the invention the hole behind the separating wall is provided with a stopping material of an elementary composition which deviates from that of the wall If the wall to be analyzed contains silicon, the stopping material should preferably be platinum or carbon.