The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Oct. 17, 2000
Sony Corporation, Tokyo, JP;
Abstract
A process for fabricating a semiconductor device, which comprises forming a recess portion in an insulating film covering a wiring made of copper or a copper alloy so that the recess portion reaches the wiring, wherein, after forming the recess portion, a plasma treatment using a gas containing hydrogen gas and nitrogen gas is conducted in a state such that the wiring is exposed through the bottom portion of the recess portion, or a plasma treatment using a gas containing hydrogen gas is conducted in a state such that the wiring is exposed through the bottom portion of the recess portion while cooling a substrate on which the wiring is formed. By the process of the present invention, a problem of redeposition of copper on the sidewall of a via hole in the argon sputtering and a problem of an etching process of the organic insulating film in the hydrogen plasma treatment can be solved, thus realizing excellent cleaning of the bottom portion of the via hole.