The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2003

Filed:

Mar. 12, 2001
Applicant:
Inventors:

Bruno M. La Fontaine, Pleasanton, CA (US);

Calvin T. Gabriel, Cupertino, CA (US);

Harry J. Levinson, Saratoga, CA (US);

Kouros Ghandehari, Santa Clara, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 ;
U.S. Cl.
CPC ...
G03F 9/00 ;
Abstract

An attenuated phase shift mask utilizes a multilayer which has been locally modified. Heat treatment or e-beam treatment can locally modify the multilayer to provide different reflective characteristics. The attenuated phase shift mask can be utilized in EUV applications.


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