The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Jul. 17, 2000
Glenn Harrison Chapman, Coquitlam, CA;
Marinko Venci Sarunic, Coquitlam, CA;
Yugiang Tu, Burnaby, CA;
Creo SRL, Burnaby, CA;
Abstract
A thermal inorganic resist for lithographic processes and image creation is disclosed. In one embodiment an In layer of 15 nm is deposited, followed by a Bi layer of 15 nm. Upon exposure to a optical light pulse of sufficient intensity the optical absorption heats the film above the eutectic melting point (110° C. for BiIn) and the resist forms an alloy in the exposed area, replicating patterns projected on its surface. Optical characteristics of the alloyed layers are in these resists typically different from the unexposed layers creating a visual image of the exposure pattern before the development etch aiding in exposure control. The resist layer is then stripped, leaving the pattern layer on the substrate. In resists showing significant optical differences (such as BiIn) after exposure this same material can be used to create images for data storage, and, when transparent, photomasks for optical lithography.