The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2003
Filed:
Jul. 12, 2001
Yukio Inazuki, Kubiki-mura, JP;
Tamotsu Maruyama, Kubiki-mura, JP;
Mikio Kojima, Kubiki-mura, JP;
Hideo Kaneko, Kubiki-mura, JP;
Masataka Watanabe, Kubiki-mura, JP;
Satoshi Okazaki, Kubiki-mura, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.